2SC4685 2004-07-26 1 toshiba transistor silicon npn epitaxial type 2SC4685 strobe flash applications medium power amplifier applications ? high dc current gain: h fe (1) = 800 to 3200 (v ce = 2 v, i c = 0.5 a) : h fe (2) = 250 (v ce = 2 v, i c = 4 a) ? low saturation voltage: v ce (sat) = 0.5 v (max) (i c = 4 a, i b = 40 ma) ? high collector power dissipation: p c = 10 w (tc = 25c), p c = 1.5 w (ta = 25c) maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo 50 v v ces 40 collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 8 v dc i c 5 collector current pulse (note) i cp 8 a base current i b 0.5 a ta = 25c 1.5 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: pulse test: pulse width = 10 ms (max), duty cycle = 30% (max) electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 50 v, i e = 0 D D 100 na emitter cut-off current i ebo v eb = 8 v, i c = 0 D D 100 na collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 20 D D v h fe (1) v ce = 2 v, i c = 0.5 a 800 D 3200 dc current gain h fe (2) v ce = 2 v, i c = 4 a 250 D D collector-emitter saturation voltage v ce (sat) i c = 4 a, i b = 40 ma D D 0.5 v base-emitter voltage v be v ce = 2 v, i c = 4 a D D 1.2 v transition frequency f t v ce = 2 v, i c = 0.5 a D 150 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 45 D pf unit: mm jedec D jeita D toshiba 2-8h1a weight: 0.82 g (typ.)
2SC4685 2004-07-26 2 marking c4685 part no. (or abbreviation code) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish.
2SC4685 2004-07-26 3 v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) dc current gain h fe collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) i c ? v ce h fe ? i c collector current i c (a) collector-emitter voltage v ce (v) safe operating area collector current i c (a) 0 0 4 8 1 2 4 5 i b = 0.5 ma 6 2 6 10 common emitter ta = 25c 40 5 50 3 30 20 10 2 0 0 4 0.2 0.8 1.0 common emitter v ce = 2 v 2 6 8 ta = 125c 25 ? 40 0.4 1.2 0.6 5 0.01 0.03 0.1 0.3 1 3 10 3 1 0.01 0.3 0.1 common emitter i c /i b = 200 tc = 125c 25 ? 40 0.03 common emitter i c /i b = 200 0.01 0.01 0.3 0.1 10 1 0.1 3 10 tc = ? 40c 25 125 3 1 0.03 0.03 0.3 100 ms * i c max (pulsed) ** 0.1 1 0.5 3 10 50 5 30 1 10 0.3 5 3 dc operation tc = 25c i c max (continuous) 10 ms * * : single nonrepetitive pulse tc = 25c ** : pulse width = 10 ms (max) duty cycle = 30% (max) tc = 25c curves must be derated linearly with increase in temperature. v ceo max 10000 100 0.01 common emitter v ce = 2 v 1000 3000 0.3 tc = 125c 25 ? 40 0.03 1 10 30 3 0.1 300 10
2SC4685 2004-07-26 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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